Atomic Layer Defect-free Top-down Process for Future Nano-devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the authors is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. This technique is indispensable to develop future innovative nano-devices.

Original languageEnglish
Title of host publication2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
EditorsTing-Ao Tang, Fan Ye, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538644409
DOIs
Publication statusPublished - 2018 Dec 5
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: 2018 Oct 312018 Nov 3

Publication series

Name2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Other

Other14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Country/TerritoryChina
CityQingdao
Period18/10/3118/11/3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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