Atomic layer control of germanium and silicon on silicon using flash heating in ultraclean chemical vapor deposition

Masao Sakuraba, Junichi Murota, Nobuo Mikoshiba, Shoichi Ono

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The separation between surface adsorption and reaction of reactant gas on Si substrate was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. Using GeH4 gas, single atomic layer epitaxy of Ge per flash lamp light shot has been realized for some process conditions. It is proposed that the total adsorption site density is nearly equal to the surface atom density, and continuous Ge-hydride adsorption is inhibited on the surface covered with an adsorbed Ge-hydride monolayer. Using SiH4 and Si2H6, atomic layer deposition control of Si was also examined.

Original languageEnglish
Pages147-149
Number of pages3
Publication statusPublished - 1991 Jan 1
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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    Sakuraba, M., Murota, J., Mikoshiba, N., & Ono, S. (1991). Atomic layer control of germanium and silicon on silicon using flash heating in ultraclean chemical vapor deposition. 147-149. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .