The separation between surface adsorption and reaction of reactant gas on Si substrate was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. Using GeH4 gas, single atomic layer epitaxy of Ge per flash lamp light shot has been realized for some process conditions. It is proposed that the total adsorption site density is nearly equal to the surface atom density, and continuous Ge-hydride adsorption is inhibited on the surface covered with an adsorbed Ge-hydride monolayer. Using SiH4 and Si2H6, atomic layer deposition control of Si was also examined.
|Number of pages||3|
|Publication status||Published - 1991 Jan 1|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
ASJC Scopus subject areas