TY - JOUR
T1 - Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition
AU - Shimamune, Yosuke
AU - Sakuraba, Masao
AU - Matsuura, Takashi
AU - Murota, Junichi
N1 - Funding Information:
The authors wish to express their thanks to Dr. B. Tillack of Institute for Semiconductor Physics, Frankfurt (Oder), Germany for his useful discussions. The CVD reactor was provided by Kokusai Electric. This study was partially supported by the Public Participation Program for the Promotion of Info. Communications' Technology R&D from the Telecommunications Advancement Organization of Japan, a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports, and Culture of Japan and Mitsubishi Foundation.
PY - 2000/8/1
Y1 - 2000/8/1
N2 - Atomic-layer adsorption of P on Si(100) and Ge(100) at 200-750 °C by PH3 was investigated using an ultraclean low-pressure chemical vapor deposition (CVD) system. At 300 °C, the PH3 adsorption was suppressed on the H-terminated Si surface, but PH3 was adsorbed dissociatively on the H-free Si surface with saturation tendency to subatomic layer. At 450-750 °C, the P atom concentration on the Si surface tended to saturate to about two or three atomic layers by exposing PH3 with little influence of the carrier gas (H2 or He). When the P-adsorbed Si was kept in Ar and in H2 at 650 °C after PH3 exposure, the P atom concentration decreased to about one atomic layer by thermal desorption and also by reduction due to hydrogen. On the Ge surface, PH3 adsorption was suppressed by H-termination at 200 °C, P atom concentration saturated to the single atomic layer at 300-450 °C. Furthermore, P desorption from the Ge surface at 450 °C occurred much faster than that from the Si surface at 650 °C, while P bonded to Ge was stable at 300 °C.
AB - Atomic-layer adsorption of P on Si(100) and Ge(100) at 200-750 °C by PH3 was investigated using an ultraclean low-pressure chemical vapor deposition (CVD) system. At 300 °C, the PH3 adsorption was suppressed on the H-terminated Si surface, but PH3 was adsorbed dissociatively on the H-free Si surface with saturation tendency to subatomic layer. At 450-750 °C, the P atom concentration on the Si surface tended to saturate to about two or three atomic layers by exposing PH3 with little influence of the carrier gas (H2 or He). When the P-adsorbed Si was kept in Ar and in H2 at 650 °C after PH3 exposure, the P atom concentration decreased to about one atomic layer by thermal desorption and also by reduction due to hydrogen. On the Ge surface, PH3 adsorption was suppressed by H-termination at 200 °C, P atom concentration saturated to the single atomic layer at 300-450 °C. Furthermore, P desorption from the Ge surface at 450 °C occurred much faster than that from the Si surface at 650 °C, while P bonded to Ge was stable at 300 °C.
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U2 - 10.1016/S0169-4332(00)00221-X
DO - 10.1016/S0169-4332(00)00221-X
M3 - Conference article
AN - SCOPUS:0034246338
VL - 162
SP - 390
EP - 394
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
T2 - 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)
Y2 - 6 July 1999 through 9 July 1999
ER -