Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

Yosuke Shimamune, Masao Sakuraba, Takashi Matsuura, Junichi Murota

Research output: Contribution to journalConference article

38 Citations (Scopus)

Abstract

Atomic-layer adsorption of P on Si(100) and Ge(100) at 200-750 °C by PH3 was investigated using an ultraclean low-pressure chemical vapor deposition (CVD) system. At 300 °C, the PH3 adsorption was suppressed on the H-terminated Si surface, but PH3 was adsorbed dissociatively on the H-free Si surface with saturation tendency to subatomic layer. At 450-750 °C, the P atom concentration on the Si surface tended to saturate to about two or three atomic layers by exposing PH3 with little influence of the carrier gas (H2 or He). When the P-adsorbed Si was kept in Ar and in H2 at 650 °C after PH3 exposure, the P atom concentration decreased to about one atomic layer by thermal desorption and also by reduction due to hydrogen. On the Ge surface, PH3 adsorption was suppressed by H-termination at 200 °C, P atom concentration saturated to the single atomic layer at 300-450 °C. Furthermore, P desorption from the Ge surface at 450 °C occurred much faster than that from the Si surface at 650 °C, while P bonded to Ge was stable at 300 °C.

Original languageEnglish
Pages (from-to)390-394
Number of pages5
JournalApplied Surface Science
Volume162
DOIs
Publication statusPublished - 2000 Aug 1
Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
Duration: 1999 Jul 61999 Jul 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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