Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition

H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We have deposited Si-DLC films by pulsed laser deposition using KrF excimer laser, and have investigated etching of the Si-DLC films by atomic hydrogen. We have examined the structure and chemical bonding of the films by Raman spectroscopy, X-ray photoelectron spectroscopy and photoelectron spectroscopy using synchrotron radiation. Photoelectron spectra of Si 2p with 135 eV photons showed two distinguishing components. The main components were identified with Si-C and silicon oxides. The intensity of the oxide component increased when the detection angle to the surface normal was increased from 0 to 60°, indicating that thin oxide layers were formed at the surface. The oxide component decreased by annealing at a substrate temperature above 850 °C in an ultra-high vacuum and it disappeared at 1050 °C. We found that the etching rate of the films drastically decreased by the incorporation of Si. It was also found that the etching rate of the Si-DLC films markedly increased after dipping in a HF solution, indicating that the hydrogen etching of the Si-DLC films is suppressed by thin oxide layers formed at the surfaces. When the HF-treated Si-DLC films were annealed at a temperature above 400 °C in a high vacuum chamber, the etching rate decreased, suggesting that oxide layers were formed again at the surfaces.

Original languageEnglish
Pages (from-to)831-834
Number of pages4
JournalDiamond and Related Materials
Volume18
Issue number5-8
DOIs
Publication statusPublished - 2009 May

Keywords

  • Diamond-like carbon
  • Etching
  • Hydrogen
  • Pulsed laser deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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