Atomic dipole moment distribution of Si atoms on a Si(111)-(7×7) surface studied using noncontact scanning nonlinear dielectric microscopy

Yasuo Cho, Ryusuke Hirose

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

A local atomic electric dipole moment distribution of Si atoms on Si(111)-(7×7) surface is clearly resolved by using a new technique called noncontact scanning nonlinear dielectric microscopy. The dc-bias voltage dependence of the atomic dipole moment on the Si(111)-(7×7) surface is measured. At the weak applied voltage of -0.5V, a positive dipole moment is detected on the Si adatom sites, whereas a negative dipole moment is observed at the interstitial sites of inter Si adatoms. Moreover, the quantitative dependence of the surface dipole moment as a function of the applied dc voltage is also revealed at a fixed point above the sample surface. This is the first successful demonstration of direct atomic dipole moment observation achieved in the field of capacitance measurement.

Original languageEnglish
Article number186101
JournalPhysical Review Letters
Volume99
Issue number18
DOIs
Publication statusPublished - 2007 Nov 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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