TY - JOUR
T1 - Atomic dipole moment distribution of Si atoms on a Si(111)-(7×7) surface studied using noncontact scanning nonlinear dielectric microscopy
AU - Cho, Yasuo
AU - Hirose, Ryusuke
PY - 2007/11/1
Y1 - 2007/11/1
N2 - A local atomic electric dipole moment distribution of Si atoms on Si(111)-(7×7) surface is clearly resolved by using a new technique called noncontact scanning nonlinear dielectric microscopy. The dc-bias voltage dependence of the atomic dipole moment on the Si(111)-(7×7) surface is measured. At the weak applied voltage of -0.5V, a positive dipole moment is detected on the Si adatom sites, whereas a negative dipole moment is observed at the interstitial sites of inter Si adatoms. Moreover, the quantitative dependence of the surface dipole moment as a function of the applied dc voltage is also revealed at a fixed point above the sample surface. This is the first successful demonstration of direct atomic dipole moment observation achieved in the field of capacitance measurement.
AB - A local atomic electric dipole moment distribution of Si atoms on Si(111)-(7×7) surface is clearly resolved by using a new technique called noncontact scanning nonlinear dielectric microscopy. The dc-bias voltage dependence of the atomic dipole moment on the Si(111)-(7×7) surface is measured. At the weak applied voltage of -0.5V, a positive dipole moment is detected on the Si adatom sites, whereas a negative dipole moment is observed at the interstitial sites of inter Si adatoms. Moreover, the quantitative dependence of the surface dipole moment as a function of the applied dc voltage is also revealed at a fixed point above the sample surface. This is the first successful demonstration of direct atomic dipole moment observation achieved in the field of capacitance measurement.
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U2 - 10.1103/PhysRevLett.99.186101
DO - 10.1103/PhysRevLett.99.186101
M3 - Article
AN - SCOPUS:35948989303
VL - 99
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 18
M1 - 186101
ER -