Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic diffusion bonding (ADB) of two flat wafers in an inert gas with thin metal films was studied. Its performance was compared to that of ADB "in vacuum." Results suggest that ADB can be conducted in Ar gas using almost any metal film, as is true also for bonding in vacuum.

Original languageEnglish
Title of host publicationProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Number of pages1
DOIs
Publication statusPublished - 2012 Aug 15
Event2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
Duration: 2012 May 222012 May 23

Publication series

NameProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

Other

Other2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
CountryJapan
CityTokyo
Period12/5/2212/5/23

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Vision and Pattern Recognition

Fingerprint Dive into the research topics of 'Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas'. Together they form a unique fingerprint.

  • Cite this

    Shimatsu, T., & Uomoto, M. (2012). Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 [6238077] (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012). https://doi.org/10.1109/LTB-3D.2012.6238077