Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas

Takehito Shimatsu; M. Uomoto

doi:10.1109/LTB-3D.2012.6238077

Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas

Takehito Shimatsu, M. Uomoto

Advanced Interdisciplinary Research Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Atomic diffusion bonding (ADB) of two flat wafers in an inert gas with thin metal films was studied. Its performance was compared to that of ADB "in vacuum." Results suggest that ADB can be conducted in Ar gas using almost any metal film, as is true also for bonding in vacuum.

Original language	English
Title of host publication	Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Number of pages	1
DOIs	https://doi.org/10.1109/LTB-3D.2012.6238077
Publication status	Published - 2012 Aug 15
Event	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan Duration: 2012 May 22 → 2012 May 23

Publication series

Name	Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

Other

Other	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Country	Japan
City	Tokyo
Period	12/5/22 → 12/5/23

ASJC Scopus subject areas

Computer Graphics and Computer-Aided Design
Computer Vision and Pattern Recognition

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Shimatsu, T., & Uomoto, M. (2012). Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 [6238077] (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012). https://doi.org/10.1109/LTB-3D.2012.6238077

Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas. / Shimatsu, Takehito; Uomoto, M.

Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. 6238077 (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shimatsu, T & Uomoto, M 2012, Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas. in Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012., 6238077, Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan, 12/5/22. https://doi.org/10.1109/LTB-3D.2012.6238077

Shimatsu T, Uomoto M. Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. 6238077. (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012). https://doi.org/10.1109/LTB-3D.2012.6238077

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abstract = "Atomic diffusion bonding (ADB) of two flat wafers in an inert gas with thin metal films was studied. Its performance was compared to that of ADB {"}in vacuum.{"} Results suggest that ADB can be conducted in Ar gas using almost any metal film, as is true also for bonding in vacuum.",

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Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas

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