TY - GEN
T1 - Atomic diffusion bonding using Y2O3 and ZrO2 films
AU - Shimatsu, T.
AU - Yoshida, H.
AU - Uomoto, M.
AU - Saito, T.
AU - Monwaki, T.
AU - Kato, N.
AU - Miyamoto, Y.
AU - Miyamoto, K.
N1 - Publisher Copyright:
© 2021 IEEE
PY - 2021/10/5
Y1 - 2021/10/5
N2 - We demonstrated atomic diffusion bonding (ADB) of wafers at room temperature using Y2O3 and ZrO2 films. Results showed that bonded interface disappeared perfectly (Y2O3 films) or partially (ZrO2 film) at room temperature, implying high bonding potential using these oxide films in ADB.
AB - We demonstrated atomic diffusion bonding (ADB) of wafers at room temperature using Y2O3 and ZrO2 films. Results showed that bonded interface disappeared perfectly (Y2O3 films) or partially (ZrO2 film) at room temperature, implying high bonding potential using these oxide films in ADB.
UR - http://www.scopus.com/inward/record.url?scp=85120436051&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85120436051&partnerID=8YFLogxK
U2 - 10.1109/LTB-3D53950.2021.9598449
DO - 10.1109/LTB-3D53950.2021.9598449
M3 - Conference contribution
AN - SCOPUS:85120436051
T3 - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
SP - 51
BT - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Y2 - 5 October 2021 through 11 October 2021
ER -