Atomic diffusion bonding using Y2O3 and ZrO2 films

T. Shimatsu, H. Yoshida, M. Uomoto, T. Saito, T. Monwaki, N. Kato, Y. Miyamoto, K. Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated atomic diffusion bonding (ADB) of wafers at room temperature using Y2O3 and ZrO2 films. Results showed that bonded interface disappeared perfectly (Y2O3 films) or partially (ZrO2 film) at room temperature, implying high bonding potential using these oxide films in ADB.

Original languageEnglish
Title of host publication2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages51
Number of pages1
ISBN (Electronic)9781665405676
DOIs
Publication statusPublished - 2021 Oct 5
Event7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan
Duration: 2021 Oct 52021 Oct 11

Publication series

Name2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/TerritoryJapan
CityVirtual, Online
Period21/10/521/10/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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