Atomic diffusion bonding using AIN films

M. Uomoto; H. Yoshida; T. Shimatsu; T. Saito; T. Moriwaki; N. Kato; Y. Miyamoto; K. Miyamoto

doi:10.1109/LTB-3D53950.2021.9598193

Atomic diffusion bonding using AIN films

M. Uomoto, H. Yoshida, T. Shimatsu, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto

Advanced Interdisciplinary Research Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrated atomic diffusion bonding (ADB) of wafers using AIN films at room temperature. Results showed that crystal lattice rearrangement occurred at the bonded interface and integrated AIN film with c-axis perpendicular to the film plane formed.

Original language	English
Title of host publication	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	45
Number of pages	1
ISBN (Electronic)	9781665405676
DOIs	https://doi.org/10.1109/LTB-3D53950.2021.9598193
Publication status	Published - 2021 Oct 5
Event	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan Duration: 2021 Oct 5 → 2021 Oct 11

Publication series

Name	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/Territory	Japan
City	Virtual, Online
Period	21/10/5 → 21/10/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LTB-3D53950.2021.9598193

Cite this

Uomoto, M., Yoshida, H., Shimatsu, T., Saito, T., Moriwaki, T., Kato, N., Miyamoto, Y., & Miyamoto, K. (2021). Atomic diffusion bonding using AIN films. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 (pp. 45). (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LTB-3D53950.2021.9598193

Atomic diffusion bonding using AIN films. / Uomoto, M.; Yoshida, H.; Shimatsu, T.; Saito, T.; Moriwaki, T.; Kato, N.; Miyamoto, Y.; Miyamoto, K.

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 45 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uomoto, M, Yoshida, H, Shimatsu, T, Saito, T, Moriwaki, T, Kato, N, Miyamoto, Y & Miyamoto, K 2021, Atomic diffusion bonding using AIN films. in 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Institute of Electrical and Electronics Engineers Inc., pp. 45, 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Virtual, Online, Japan, 21/10/5. https://doi.org/10.1109/LTB-3D53950.2021.9598193

Uomoto M, Yoshida H, Shimatsu T, Saito T, Moriwaki T, Kato N et al. Atomic diffusion bonding using AIN films. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 45. (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). https://doi.org/10.1109/LTB-3D53950.2021.9598193

Uomoto, M. ; Yoshida, H. ; Shimatsu, T. ; Saito, T. ; Moriwaki, T. ; Kato, N. ; Miyamoto, Y. ; Miyamoto, K. / Atomic diffusion bonding using AIN films. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 45 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

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abstract = "We demonstrated atomic diffusion bonding (ADB) of wafers using AIN films at room temperature. Results showed that crystal lattice rearrangement occurred at the bonded interface and integrated AIN film with c-axis perpendicular to the film plane formed.",

author = "M. Uomoto and H. Yoshida and T. Shimatsu and T. Saito and T. Moriwaki and N. Kato and Y. Miyamoto and K. Miyamoto",

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AU - Miyamoto, Y.

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Atomic diffusion bonding using AIN films

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