TY - GEN
T1 - Atomic diffusion bonding using AIN films
AU - Uomoto, M.
AU - Yoshida, H.
AU - Shimatsu, T.
AU - Saito, T.
AU - Moriwaki, T.
AU - Kato, N.
AU - Miyamoto, Y.
AU - Miyamoto, K.
N1 - Publisher Copyright:
© 2021 IEEE
PY - 2021/10/5
Y1 - 2021/10/5
N2 - We demonstrated atomic diffusion bonding (ADB) of wafers using AIN films at room temperature. Results showed that crystal lattice rearrangement occurred at the bonded interface and integrated AIN film with c-axis perpendicular to the film plane formed.
AB - We demonstrated atomic diffusion bonding (ADB) of wafers using AIN films at room temperature. Results showed that crystal lattice rearrangement occurred at the bonded interface and integrated AIN film with c-axis perpendicular to the film plane formed.
UR - http://www.scopus.com/inward/record.url?scp=85120406171&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85120406171&partnerID=8YFLogxK
U2 - 10.1109/LTB-3D53950.2021.9598193
DO - 10.1109/LTB-3D53950.2021.9598193
M3 - Conference contribution
AN - SCOPUS:85120406171
T3 - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
SP - 45
BT - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Y2 - 5 October 2021 through 11 October 2021
ER -