Atomic diffusion bonding of wafers with oxide underlayers using thin Hf films for optical applications

G. Yonezawa, M. Uomoto, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic diffusion bonding of wafers with oxide underlayers using Hf films produces an interface with 100% light transmittance and large surface free energy at the bonded interface greater than 2 J/m2, which is useful for optical applications with high photon energy.

Original languageEnglish
Title of host publication2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages52
Number of pages1
ISBN (Electronic)9781665405676
DOIs
Publication statusPublished - 2021 Oct 5
Event7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan
Duration: 2021 Oct 52021 Oct 11

Publication series

Name2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/TerritoryJapan
CityVirtual, Online
Period21/10/521/10/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Atomic diffusion bonding of wafers with oxide underlayers using thin Hf films for optical applications'. Together they form a unique fingerprint.

Cite this