TY - GEN
T1 - Atomic Diffusion Bonding of Wafers using a-Ge Films with Extremely Low Electrical Conductivity
AU - Muraoka, A.
AU - Uomoto, M.
AU - Abe, M.
AU - Shimatsu, T.
PY - 2019/5
Y1 - 2019/5
N2 - Atomic diffusion bonding of wafers using amorphous Ge (a-Ge) films was studied. Results indicate that the surface roughness S of a-Ge films is expected to be less than 0.35 nm to obtain surface free energy at the bonded interface greater than 1 J/m at the interface of bonded a-Ge(20 nm) films.
AB - Atomic diffusion bonding of wafers using amorphous Ge (a-Ge) films was studied. Results indicate that the surface roughness S of a-Ge films is expected to be less than 0.35 nm to obtain surface free energy at the bonded interface greater than 1 J/m at the interface of bonded a-Ge(20 nm) films.
UR - http://www.scopus.com/inward/record.url?scp=85068359611&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068359611&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735352
DO - 10.23919/LTB-3D.2019.8735352
M3 - Conference contribution
AN - SCOPUS:85068359611
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -