Atomic Diffusion Bonding of Wafers using a-Ge Films with Extremely Low Electrical Conductivity

A. Muraoka, M. Uomoto, M. Abe, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic diffusion bonding of wafers using amorphous Ge (a-Ge) films was studied. Results indicate that the surface roughness S of a-Ge films is expected to be less than 0.35 nm to obtain surface free energy at the bonded interface greater than 1 J/m at the interface of bonded a-Ge(20 nm) films.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country/TerritoryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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