Atomic diffusion bonding for optical devices with high optical density

G. Yonezawa, Y. Takahashi, Y. Sato, S. Abe, M. Uomoto, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

An inorganic bonding method providing 100% light transmittance at the bonded interface was proposed for fabricating devices with high optical density. First, we fabricated 5000 run-thick SiO2 oxide underlayers on synthetic quartz glass wafers. After the film surfaces were polished to reduce surface roughness, the wafers with oxide underlayers were bonded using thin Ti films in vacuum at room temperature as a usual atomic diffusion process. After post annealing at 300 °C, 100% light transmittance at the bonded interface with the surface free energy at the bonded interface greater than 2 J/m2 was achieved. Dissociated oxygen from oxide layers probably enhanced Ti films oxidation, resulting in high light transmittance with high bonding strength attributable to the annealing. Using this bonding process, we fabricated a polarizing beam splitter and demonstrated that this bonding process is useful to fabricate devices with high optical density.

Original languageEnglish
Title of host publicationECS Transactions
EditorsC.S. Tan, T. Suga, H. Baumgart, F. Fournel, M. Goorsky, K.D. Hobart, R. Knechtel
PublisherElectrochemical Society Inc.
Pages233-245
Number of pages13
Edition5
ISBN (Print)9781510871656
DOIs
Publication statusPublished - 2018
EventSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number5
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/TerritoryMexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • Engineering(all)

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