Atomic control of doping during Si based epitaxial layer growth processes

B. Tillack, Y. Yamamoto, J. Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Atomic-level processing based on surface reaction control is used for B and P doping during Si, SiGe or Ge epitaxy. The concept of atomic layer processing is base on the separation of adsorption of the dopant gases from the layer growth. By this way the doping process is controlled by surface adsorption Z desorption of dopant gas mainly. For B atomic layer doping of SiGe and pure Ge using B2H6, high doping levels and steep doping profiles have been reached. The process was found to be self-limited at ̃100°C indicating preferred adsorption of B2H6 on Si and Ge sites and suppression of B cluster formation. For P atomic layer doping on Si and SiGe self-limitation of the process has been observed for temperatures between 200-600°C allowing very precise dopant dose and location control.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages603-614
Number of pages12
Edition6
DOIs
Publication statusPublished - 2010 Dec 1
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • Engineering(all)

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