Atomic configurations, stability, and impurity vibrations of carbon-oxygen complexes in silicon

Chioko Kaneta, Yoshimi Shirakawa, Hiroshi Yamada-Kaneta

Research output: Contribution to journalArticlepeer-review

Abstract

We investigated the atomic configurations, stabilizing mechanism, and impurity vibrations of carbon-oxygen (C-O) complexes in crystalline silicon both theoretically (by calculating total energy using norm-conserving pseudopotentials), and experimentally (by measuring low-temperature infrared absorption). We found that the second neighbor interstitial site of a substitutional carbon atom is more stable for an oxygen atom than the first neighbor site. Lattice relaxation is essential to this stability. The calculations on the impurity vibrations of the C-O complex of the second-neighbor configuration closely agree with the experimental results. The existence of several kinds of C-O complexes with different configurations, which is suggested by the calculations, was confirmed by experiment.

Original languageEnglish
Pages (from-to)91-101
Number of pages11
JournalFujitsu Scientific and Technical Journal
Volume30
Issue number1
Publication statusPublished - 1994 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Human-Computer Interaction
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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