Atomic arrangement of dislocation defects in GaAs by HREM

I. Yonenaga, S. H. Lim, C. W. Lee, D. Shindo

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Atom positions and local structure around a perfect dislocation and the central stacking fault of a Z-shape faulted dipole in deformed GaAs were evaluated numerically through high resolution electron microscopic (HREM) analysis. It was revealed around the central stacking fault, connecting the two stair-rods of the dipole, that there exists a local atomic displacement by the original faulting reaction with the motion of a Shockley dislocation. In addition, the stacking fault was found to be a unique atomic structure due to relaxation, different from that of the intrinsic stacking fault of a dissociated dislocation.

Original languageEnglish
Pages (from-to)125-128
Number of pages4
JournalMaterials Science and Engineering A
Volume309-310
DOIs
Publication statusPublished - 2001 Jul 15

Keywords

  • Atomic displacement
  • High resolution transmission electron microscopy
  • Perfect dislocation
  • Stacking fault
  • Z-shape faulted dipole

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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