Atomic arrangement of a Z-shape faulted dipole within deformed GaAs

Atom positions and local structure around the central stacking fault of a Z-shape faulted dipole within deformed GaAs have been evaluated numerically, for the first time, through high resolution electron microscopic analysis. From comparison with the numerical image computation, the stacking fault is found to generate large local atomic displacements and exhibits a different structure from that of the intrinsic stacking fault of a dissociated dislocation considered so far. The atomic arrangement on and around the stacking fault is discussed.