Abstract
Interfacial atomic and electronic structures of Cu/Al2O 3(0001) and Cu/Al2O3(1120) prepared by a pulsed-laser deposition technique were characterized by high-resolution transmission electron microscopy (HRTEM) and electron energy-loss spectroscopy (EELS). It was found that both systems have O-terminated interfaces, irrespective of different substrate orientations. This indicates that Cu-O interactions across the interface play an important role for the Cu/Al 2O3 systems.
Original language | English |
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Pages (from-to) | 3859-3862 |
Number of pages | 4 |
Journal | Materials Science Forum |
Volume | 475-479 |
Issue number | V |
DOIs | |
Publication status | Published - 2005 |
Externally published | Yes |
Event | PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China Duration: 2004 Nov 2 → 2004 Nov 5 |
Keywords
- Cu/sapphire interfaces
- Electron energy-loss spectroscopy (EELS)
- High-resolution transmission electron microscopy (HRTEM)
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering