Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, Yasuyoshi Nagai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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