TY - GEN
T1 - Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding
AU - Shimizu, Yasuo
AU - Ebisawa, Naoki
AU - Ohno, Yutaka
AU - Liang, Jianbo
AU - Shigekawa, Naoteru
AU - Inoue, Koji
AU - Nagai, Yasuyoshi
PY - 2019/5
Y1 - 2019/5
N2 - Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.
AB - Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.
UR - http://www.scopus.com/inward/record.url?scp=85068391462&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068391462&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735167
DO - 10.23919/LTB-3D.2019.8735167
M3 - Conference contribution
AN - SCOPUS:85068391462
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -