Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding

Yasuo Shimizu; Naoki Ebisawa; Yutaka Ohno; Jianbo Liang; Naoteru Shigekawa; Koji Inoue; Yasuyoshi Nagai

doi:10.23919/LTB-3D.2019.8735167

Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, Yasuyoshi Nagai

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.

Original language	English
Title of host publication	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	56
Number of pages	1
ISBN (Electronic)	9784904743072
DOIs	https://doi.org/10.23919/LTB-3D.2019.8735167
Publication status	Published - 2019 May
Event	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan Duration: 2019 May 21 → 2019 May 25

Publication series

Name	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country/Territory	Japan
City	Kanazawa, Ishikawa
Period	19/5/21 → 19/5/25

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.23919/LTB-3D.2019.8735167

Cite this

Shimizu, Y., Ebisawa, N., Ohno, Y., Liang, J., Shigekawa, N., Inoue, K., & Nagai, Y. (2019). Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 (pp. 56). [8735167] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735167

Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. / Shimizu, Yasuo; Ebisawa, Naoki; Ohno, Yutaka; Liang, Jianbo; Shigekawa, Naoteru; Inoue, Koji ; Nagai, Yasuyoshi.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 56 8735167 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shimizu, Y, Ebisawa, N, Ohno, Y, Liang, J, Shigekawa, N, Inoue, K & Nagai, Y 2019, Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735167, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., pp. 56, 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735167

Shimizu Y, Ebisawa N, Ohno Y, Liang J, Shigekawa N, Inoue K et al. Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 56. 8735167. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735167

Shimizu, Yasuo ; Ebisawa, Naoki ; Ohno, Yutaka ; Liang, Jianbo ; Shigekawa, Naoteru ; Inoue, Koji ; Nagai, Yasuyoshi. / Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 56 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

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title = "Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding",

abstract = "Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.",

author = "Yasuo Shimizu and Naoki Ebisawa and Yutaka Ohno and Jianbo Liang and Naoteru Shigekawa and Koji Inoue and Yasuyoshi Nagai",

note = "Funding Information: This work was supported in part by JSPS KAKENHI Grant No. 15H05413 and the “Research and development of ultra-high efficiency and low-cost III–V compound semiconductor solar cell modules (High efficiency and low-cost III–V/Si tandem)” project of NEDO. Publisher Copyright: {\textcopyright} 2019 JSPS 191st Committee on Innovative Interface Bonding Technology.; 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 ; Conference date: 21-05-2019 Through 25-05-2019",

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AU - Shigekawa, Naoteru

AU - Inoue, Koji

AU - Nagai, Yasuyoshi

N1 - Funding Information: This work was supported in part by JSPS KAKENHI Grant No. 15H05413 and the “Research and development of ultra-high efficiency and low-cost III–V compound semiconductor solar cell modules (High efficiency and low-cost III–V/Si tandem)” project of NEDO. Publisher Copyright: © 2019 JSPS 191st Committee on Innovative Interface Bonding Technology.

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N2 - Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.

AB - Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.

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Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding

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