Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding

Yasuo Shimizu; Naoki Ebisawa; Yutaka Ohno; Jianbo Liang; Naoteru Shigekawa; Koji Inoue; Yasuyoshi Nagai

doi:10.23919/LTB-3D.2019.8735167

Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, Yasuyoshi Nagai

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.

Original language	English
Title of host publication	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	1
ISBN (Electronic)	9784904743072
DOIs	https://doi.org/10.23919/LTB-3D.2019.8735167
Publication status	Published - 2019 May
Event	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan Duration: 2019 May 21 → 2019 May 25

Publication series

Name	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country	Japan
City	Kanazawa, Ishikawa
Period	19/5/21 → 19/5/25

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.23919/LTB-3D.2019.8735167

Fingerprint Dive into the research topics of 'Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding'. Together they form a unique fingerprint.

Cite this

Shimizu, Y., Ebisawa, N., Ohno, Y., Liang, J., Shigekawa, N., Inoue, K., & Nagai, Y. (2019). Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735167] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735167

Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. / Shimizu, Yasuo; Ebisawa, Naoki; Ohno, Yutaka; Liang, Jianbo; Shigekawa, Naoteru; Inoue, Koji ; Nagai, Yasuyoshi.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735167 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shimizu, Y, Ebisawa, N, Ohno, Y, Liang, J, Shigekawa, N, Inoue, K & Nagai, Y 2019, Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735167, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735167

Shimizu Y, Ebisawa N, Ohno Y, Liang J, Shigekawa N, Inoue K et al. Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735167. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735167

Shimizu, Yasuo ; Ebisawa, Naoki ; Ohno, Yutaka ; Liang, Jianbo ; Shigekawa, Naoteru ; Inoue, Koji ; Nagai, Yasuyoshi. / Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

@inproceedings{40dc8e92702043c28ae7826a30c3e687,

title = "Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding",

abstract = "Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.",

author = "Yasuo Shimizu and Naoki Ebisawa and Yutaka Ohno and Jianbo Liang and Naoteru Shigekawa and Koji Inoue and Yasuyoshi Nagai",

year = "2019",

month = may,

doi = "10.23919/LTB-3D.2019.8735167",

language = "English",

series = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",

note = "6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 ; Conference date: 21-05-2019 Through 25-05-2019",

}

TY - GEN

T1 - Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding

AU - Shimizu, Yasuo

AU - Ebisawa, Naoki

AU - Ohno, Yutaka

AU - Liang, Jianbo

AU - Shigekawa, Naoteru

AU - Inoue, Koji

AU - Nagai, Yasuyoshi

PY - 2019/5

Y1 - 2019/5

N2 - Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.

AB - Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.

UR - http://www.scopus.com/inward/record.url?scp=85068391462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068391462&partnerID=8YFLogxK

U2 - 10.23919/LTB-3D.2019.8735167

DO - 10.23919/LTB-3D.2019.8735167

M3 - Conference contribution

AN - SCOPUS:85068391462

T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Y2 - 21 May 2019 through 25 May 2019

ER -