Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28 / Si30isotope superlattices with sub-nanometer spatial resolution

Yasuo Shimizu, Yoko Kawamura, Masashi Uematsu, Kohei M. Itoh, Mitsuhiro Tomita, Mikio Sasaki, Hiroshi Uchida, Mamoru Takahashi

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Abstract

Laser-assisted atom probe microscopy of 2 nm period Si28 / Si30isotope superlattices (SLs) is reported. Three-dimensional distributions of Si28 and Si30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.

Original languageEnglish
Article number076102
JournalJournal of Applied Physics
Volume106
Issue number7
DOIs
Publication statusPublished - 2009 Oct 23

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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