Atom-probe investigation of III-V semiconductors: Comparison of voltage-pulse and laser-pulse modes

Tomihiro Hashizume; Y. Hasegawa; A. Kobayashi; T. Sakurai

doi:10.1063/1.1138604

Atom-probe investigation of III-V semiconductors: Comparison of voltage-pulse and laser-pulse modes

Tomihiro Hashizume, Y. Hasegawa, A. Kobayashi, T. Sakurai

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Pulse-field evaporation of III-V compound semiconductors was investigated employing our high-performance time-of-flight atom probe, which accommodates the demand for precise knowledge of both mass (focusing type) and energy deficits (straight type) of field-evaporated ion species. We show that laser-pulse mode can yield correct compositions only if an appropriate dc holding field range is used, which is 0.35 to 0.65 for the GaAs presently studied.

Original language	English
Pages (from-to)	1378-1380
Number of pages	3
Journal	Review of Scientific Instruments
Volume	57
Issue number	7
DOIs	https://doi.org/10.1063/1.1138604
Publication status	Published - 1986 Dec 1

ASJC Scopus subject areas

Instrumentation

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10.1063/1.1138604

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AU - Kobayashi, A.

AU - Sakurai, T.

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