Abstract
Pulse-field evaporation of III-V compound semiconductors was investigated employing our high-performance time-of-flight atom probe, which accommodates the demand for precise knowledge of both mass (focusing type) and energy deficits (straight type) of field-evaporated ion species. We show that laser-pulse mode can yield correct compositions only if an appropriate dc holding field range is used, which is 0.35 to 0.65 for the GaAs presently studied.
Original language | English |
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Pages (from-to) | 1378-1380 |
Number of pages | 3 |
Journal | Review of Scientific Instruments |
Volume | 57 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1986 |
Externally published | Yes |
ASJC Scopus subject areas
- Instrumentation