Atom-probe investigation of III-V semiconductors: Comparison of voltage-pulse and laser-pulse modes

Tomihiro Hashizume, Y. Hasegawa, A. Kobayashi, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)

    Abstract

    Pulse-field evaporation of III-V compound semiconductors was investigated employing our high-performance time-of-flight atom probe, which accommodates the demand for precise knowledge of both mass (focusing type) and energy deficits (straight type) of field-evaporated ion species. We show that laser-pulse mode can yield correct compositions only if an appropriate dc holding field range is used, which is 0.35 to 0.65 for the GaAs presently studied.

    Original languageEnglish
    Pages (from-to)1378-1380
    Number of pages3
    JournalReview of Scientific Instruments
    Volume57
    Issue number7
    DOIs
    Publication statusPublished - 1986 Dec 1

    ASJC Scopus subject areas

    • Instrumentation

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