Atom-probe investigation of III-V semiconductors: Comparison of voltage-pulse and laser-pulse modes

Tomihiro Hashizume, Y. Hasegawa, A. Kobayashi, T. Sakurai

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

Pulse-field evaporation of III-V compound semiconductors was investigated employing our high-performance time-of-flight atom probe, which accommodates the demand for precise knowledge of both mass (focusing type) and energy deficits (straight type) of field-evaporated ion species. We show that laser-pulse mode can yield correct compositions only if an appropriate dc holding field range is used, which is 0.35 to 0.65 for the GaAs presently studied.

Original languageEnglish
Pages (from-to)1378-1380
Number of pages3
JournalReview of Scientific Instruments
Volume57
Issue number7
DOIs
Publication statusPublished - 1986
Externally publishedYes

ASJC Scopus subject areas

  • Instrumentation

Fingerprint

Dive into the research topics of 'Atom-probe investigation of III-V semiconductors: Comparison of voltage-pulse and laser-pulse modes'. Together they form a unique fingerprint.

Cite this