Atom-probe analysis of SiC

S. Nakamura, T. Hashizume, Y. Hasegawa, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    Abstract

    SiC, a semiconductor the interest in which has been revived recently, has been successfully studied by a time-of-flight atom probe. The evaporation field for SiC was determined to the approximately 5.1 V/A in the presence of He at 20 K. Although a satisfactory result was difficult to obtain using a high-voltage pulse mode, because of its high resistivity, a laser-pulse mode has yielded a stoichiometrically correct composition.

    Original languageEnglish
    Pages (from-to)L551-L554
    JournalSurface Science
    Volume172
    Issue number3
    DOIs
    Publication statusPublished - 1986 Jul 2

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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