Atom-probe analysis of SiC

S. Nakamura, T. Hashizume, Y. Hasegawa, T. Sakurai

Research output: Contribution to journalArticlepeer-review

Abstract

SiC, a semiconductor the interest in which has been revived recently, has been successfully studied by a time-of-flight atom probe. The evaporation field for SiC was determined to the approximately 5.1 V/A in the presence of He at 20 K. Although a satisfactory result was difficult to obtain using a high-voltage pulse mode, because of its high resistivity, a laser-pulse mode has yielded a stoichiometrically correct composition.

Original languageEnglish
Pages (from-to)L551-L554
JournalSurface Science
Volume172
Issue number3
DOIs
Publication statusPublished - 1986 Jul 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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