Atmospheric photoassisted chemical vapor deposition of Si using ultraviolet-light irradiated H2 carrier gas and nonexcited SiH 2Cl2

Motaharul Kabir Mazumder, Yuji Takakuwa, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have proposed a new photoassisted chemical vapor deposition (photo-CVD) process of Si, in which only a hydrogen carrier gas is excited by UV light from low-pressure Hg lamps and a reactant gas of SiH2Cl2 is not irradiated at all. In this type of photo-CVD, it is found that (1) the number of pyramidal hillocks on orientation-just surfaces is drastically suppressed, (2) the number of etch pits, corresponding to the stacking fault and the precipitation of contaminants, is also decreased, (3) the growth rate is significantly enhanced, and (4) the surface roughness is decreased. In particular it should be emphasized that these effects are more apparent at atmospheric pressure. It is suggested that the UV-light irradiated hydrogen plays an important role in removing chlorine atoms adsorbed on the surface.

Original languageEnglish
Pages (from-to)2881-2883
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number24
DOIs
Publication statusPublished - 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Atmospheric photoassisted chemical vapor deposition of Si using ultraviolet-light irradiated H<sub>2</sub> carrier gas and nonexcited SiH <sub>2</sub>Cl<sub>2</sub>'. Together they form a unique fingerprint.

Cite this