At wavelength observation of phase defect embedded in EUV mask using microscope technique

Tsuneo Terasawa, Tsuyoshi Amano, Takeshi Yamane, Hidehiro Watanabe, Mitsunori Toyoda, Tetsuo Harada, Takeo Watanabe, Hiroo Kinoshita

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The effect of phase defect on extreme ultraviolet (EUV) lithography was examined using an EUV microscope. A test mask containing periodic absorber line patterns and programmed pit phase defects embedded in a multilayer-coated mask blank was prepared, and the mask patterns were observed by the EUV microscope developed by Tohoku University and constructed at the site of a beam line of the New SUBARU of the University of Hyogo. The half pitches of the absorber patterns were 64 nm and 44 nm at mask which corresponded to 16 nm and 11 nm device generations. The programmed defects included not only square-shape defects but also rectangular-shape defects with different orientations. When a phase defect was located between two adjacent absorber patterns, then the observation image intensity of the absorber lines and spaces (L/S) patterns varied, and the impact of a phase defect was predicted as an intensity variation of bright space image. Phase defect location dependency and defect shape dependency of the observation image intensity were examined. The effectiveness of the EUV microscope to predict the phase defect impacts was confirmed.

    Original languageEnglish
    Title of host publicationExtreme Ultraviolet (EUV) Lithography V
    PublisherSPIE
    ISBN (Print)9780819499714
    DOIs
    Publication statusPublished - 2014 Jan 1
    EventExtreme Ultraviolet (EUV) Lithography V - San Jose, CA, United States
    Duration: 2014 Feb 242014 Feb 27

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume9048
    ISSN (Print)0277-786X
    ISSN (Electronic)1996-756X

    Other

    OtherExtreme Ultraviolet (EUV) Lithography V
    CountryUnited States
    CitySan Jose, CA
    Period14/2/2414/2/27

    Keywords

    • EUV microscope
    • at wavelength observation
    • mask
    • multilayer
    • phase defect

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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