At wavelength observation of phase defect embedded in EUV mask using microscope technique

Tsuneo Terasawa, Tsuyoshi Amano, Takeshi Yamane, Hidehiro Watanabe, Mitsunori Toyoda, Tetsuo Harada, Takeo Watanabe, Hiroo Kinoshita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The effect of phase defect on extreme ultraviolet (EUV) lithography was examined using an EUV microscope. A test mask containing periodic absorber line patterns and programmed pit phase defects embedded in a multilayer-coated mask blank was prepared, and the mask patterns were observed by the EUV microscope developed by Tohoku University and constructed at the site of a beam line of the New SUBARU of the University of Hyogo. The half pitches of the absorber patterns were 64 nm and 44 nm at mask which corresponded to 16 nm and 11 nm device generations. The programmed defects included not only square-shape defects but also rectangular-shape defects with different orientations. When a phase defect was located between two adjacent absorber patterns, then the observation image intensity of the absorber lines and spaces (L/S) patterns varied, and the impact of a phase defect was predicted as an intensity variation of bright space image. Phase defect location dependency and defect shape dependency of the observation image intensity were examined. The effectiveness of the EUV microscope to predict the phase defect impacts was confirmed.

Original languageEnglish
Title of host publicationExtreme Ultraviolet (EUV) Lithography V
PublisherSPIE
ISBN (Print)9780819499714
DOIs
Publication statusPublished - 2014 Jan 1
EventExtreme Ultraviolet (EUV) Lithography V - San Jose, CA, United States
Duration: 2014 Feb 242014 Feb 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9048
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherExtreme Ultraviolet (EUV) Lithography V
CountryUnited States
CitySan Jose, CA
Period14/2/2414/2/27

Keywords

  • EUV microscope
  • at wavelength observation
  • mask
  • multilayer
  • phase defect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Terasawa, T., Amano, T., Yamane, T., Watanabe, H., Toyoda, M., Harada, T., Watanabe, T., & Kinoshita, H. (2014). At wavelength observation of phase defect embedded in EUV mask using microscope technique. In Extreme Ultraviolet (EUV) Lithography V [904825] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9048). SPIE. https://doi.org/10.1117/12.2046156