TY - JOUR
T1 - At-wavelength extreme ultraviolet lithography mask observation using a high-magnification objective with three multilayer mirrors
AU - Toyoda, Mitsunori
AU - Yamasoe, Kenjiro
AU - Hatano, Tadashi
AU - Yanagihara, Mihiro
AU - Tokimasa, Akifumi
AU - Harada, Tetsuo
AU - Watanabe, Takeo
AU - Kinoshita, Hiroo
PY - 2012/11/1
Y1 - 2012/11/1
N2 - Motivated by the need for at-wavelength observation of extreme ultraviolet (EUV) lithography masks, we developed a full-field EUV microscope that has a multilayer-mirror objective. This objective is based on an innovative optical design that gives a magnification of over ×1400, enabling us to use a conventional charge-coupled device (CCD) camera as the detector. In addition, when the objective is corrected for off-axis aberrations, it has a large field of view of a few hundred micrometers, permitting rapid inspection of a whole mask. We demonstrate this novel design by presenting at-wavelength images of a mask.
AB - Motivated by the need for at-wavelength observation of extreme ultraviolet (EUV) lithography masks, we developed a full-field EUV microscope that has a multilayer-mirror objective. This objective is based on an innovative optical design that gives a magnification of over ×1400, enabling us to use a conventional charge-coupled device (CCD) camera as the detector. In addition, when the objective is corrected for off-axis aberrations, it has a large field of view of a few hundred micrometers, permitting rapid inspection of a whole mask. We demonstrate this novel design by presenting at-wavelength images of a mask.
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U2 - 10.1143/APEX.5.112501
DO - 10.1143/APEX.5.112501
M3 - Article
AN - SCOPUS:84869199653
VL - 5
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 11
M1 - 112501
ER -