Asymmetrical quantum dot growth on tensile and compressive-strained ZnO nanowire surfaces

L. H. Wang, X. D. Han, Y. F. Zhang, K. Zheng, P. Liu, Z. Zhang

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    ZnO nanowire was bent in a high-resolution transmission electron microscope (HRTEM). The growth process of tensile and compressive stress-induced asymmetrical ZnO quantum dots (QDs) on bent ZnO nanowire (NW) surface was observed in situ at the atomic scale. The positionally resolved atomic-level strain distribution along the radial directions was mapped directly from the atomic-level strained HRTEM images of the bent ZnO NW. The size, growth rate and density of the QDs can be significantly affected by the strain type and magnitude. These results are helpful in controlling the fabrication of ZnO QDs.

    Original languageEnglish
    Pages (from-to)651-657
    Number of pages7
    JournalActa Materialia
    Volume59
    Issue number2
    DOIs
    Publication statusPublished - 2011 Jan

    Keywords

    • Asymmetrical growth
    • Energy barrier
    • Quantum dots

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Polymers and Plastics
    • Metals and Alloys

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