Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection

Taiichi Otsuji, Takayuki Watanabe, Stephane Boubanga-Tombet, Tetsuya Suemitsu, Dominique Coquillat, Wojciech Knap, Denis Fateev, Vyacheslav Popov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.

Original languageEnglish
Title of host publication2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
DOIs
Publication statusPublished - 2013 Aug 26
Event2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe, Japan
Duration: 2013 May 192013 May 23

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
CountryJapan
CityKobe
Period13/5/1913/5/23

Keywords

  • HEMT
  • detector
  • grating
  • plasmon
  • terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection'. Together they form a unique fingerprint.

Cite this