TY - GEN
T1 - Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection
AU - Otsuji, Taiichi
AU - Watanabe, Takayuki
AU - Boubanga-Tombet, Stephane
AU - Suemitsu, Tetsuya
AU - Coquillat, Dominique
AU - Knap, Wojciech
AU - Fateev, Denis
AU - Popov, Vyacheslav
PY - 2013/8/26
Y1 - 2013/8/26
N2 - This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.
AB - This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.
KW - HEMT
KW - detector
KW - grating
KW - plasmon
KW - terahertz
UR - http://www.scopus.com/inward/record.url?scp=84882368458&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84882368458&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2013.6562639
DO - 10.1109/ICIPRM.2013.6562639
M3 - Conference contribution
AN - SCOPUS:84882368458
SN - 9781467361309
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
T2 - 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
Y2 - 19 May 2013 through 23 May 2013
ER -