Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection

Stephane Boubanga-Tombet, Yudai Tanimoto, Takayuki Watanabe, Tetsuya Suemitsu, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Vyacheslav Popov, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We report terahertz detectors with a record sensitivity of 6.4 kV/W and noise equivalent power of 15 pW/√Hz in the above 1 THz region. The key point of this major breakthrough is careful design and fabrication of Plasmonic devices based on Field Effect Transistor structures combining interdigitated metal gates and an asymmetric metallization scheme.

Original languageEnglish
Title of host publicationIRMMW-THz 2012 - 37th International Conference on Infrared, Millimeter, and Terahertz Waves
DOIs
Publication statusPublished - 2012 Dec 1
Event37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012 - Wollongong, NSW, Australia
Duration: 2012 Sep 232012 Sep 28

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Other

Other37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012
Country/TerritoryAustralia
CityWollongong, NSW
Period12/9/2312/9/28

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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