Asymmetric distribution of charge trap in HfO2-based high-k gate dielectrics

K. Higuchi, T. Naito, A. Uedono, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, S. Yamasaki, K. Yamada, R. Hasunuma, K. Yamabe

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Engineering & Materials Science