Assignment of the Raman active vibration modes of β-Si3N4 using micro-Raman scattering

Katsuya Honda, Shino Yokoyama, Shun Ichiro Tanaka

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27 Citations (Scopus)


The vibrational modes of the β-Si3N4 Raman active bands appearing in the wave number region between 110 and 1100cm-1 were determined by the polarization and the crystallographic orientation dependence of the Raman intensities of the bands using micro-Raman spectroscopy. The laser beam was focused onto a single grain with the shape of a regular hexagon or elongated hexagon on the sintered ceramic plate. The three intense bands appearing at about 185, 208, and 230cm-1 were attributed to the vibrational modes of E2g, Ag, and E1g, respectively. The remaining peaks were also assigned to the irreducible representations.

Original languageEnglish
Pages (from-to)7380-7384
Number of pages5
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 1999 May 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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