Abstract
Correlated thermal-diffuse scattering (CTDS), a direct structural technique using a simple oscillatory intensity variation in the medium energy electron diffraction, has been applied to the biatomic surface system of Si(111)(√3 × √3)-In. A problem with the application of CTDS to multicomposition systems arises from the element-specific atomic scattering factors. The difference in atomic scattering factors disturbs the diffraction phase originating from the path length difference and causes the shift from the true atomic position in Patterson analysis. In order to recover the true atomic position, a numerical calibration method has been introduced. With the aid of the calibration, structural parameters for the topmost three layers of the Si(111)(√3 × √3)-In surface have been determined with 0.1 Å accuracy. This shows that CTDS is applicable to multicomposition surface systems.
Original language | English |
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Pages (from-to) | 547-553 |
Number of pages | 7 |
Journal | Surface Review and Letters |
Volume | 7 |
Issue number | 5-6 |
DOIs | |
Publication status | Published - 2000 Dec 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry