A new method of cleaning InP substrates under molecular beam epitaxy conditions involving heating to ≥500°C in an As4 flux (J As4 ≃1015-1016 cm-2 s -1) is described. Evidence of surface cleanliness, good morphology, ordered surface reconstruction, and integrity of chemical composition at the interface is given. Lattice-matched layers of Ga0.47In 0.53As grown on InP substrates cleaned in this way showed excellent electrical properties: e.g. a room-temperature mobility μ300=8600 cmPu2 V-1 s-1 at n300 =1016 cm -3.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)