Arsenic stabilization of InP substrates for growth of GaxIn 1-xAs layers by molecular beam epitaxy

G. J. Davies, R. Heckingbottom, H. Ohno, C. E.C. Wood, A. R. Calawa

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86 Citations (Scopus)


A new method of cleaning InP substrates under molecular beam epitaxy conditions involving heating to ≥500°C in an As4 flux (J As4 ≃1015-1016 cm-2 s -1) is described. Evidence of surface cleanliness, good morphology, ordered surface reconstruction, and integrity of chemical composition at the interface is given. Lattice-matched layers of Ga0.47In 0.53As grown on InP substrates cleaned in this way showed excellent electrical properties: e.g. a room-temperature mobility μ300=8600 cmPu2 V-1 s-1 at n300 =1016 cm -3.

Original languageEnglish
Pages (from-to)290-292
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 1980 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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