Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy

R. Yano, Y. Hirayama, S. Miyashita, N. Uesugi, S. Uehara

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Pump-probe spectroscopy was used to study the arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs. Results showed that a sample grown under a high arsenic pressure has a shorter carrier lifetime for both as-grown and annealed condition. Results also showed that the carrier decay times of samples changed drastically when the annealing temperature was above 550°C.

Original languageEnglish
Pages (from-to)3966-3971
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number6
DOIs
Publication statusPublished - 2003 Sep 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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