Pump-probe spectroscopy was used to study the arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs. Results showed that a sample grown under a high arsenic pressure has a shorter carrier lifetime for both as-grown and annealed condition. Results also showed that the carrier decay times of samples changed drastically when the annealing temperature was above 550°C.
ASJC Scopus subject areas
- Physics and Astronomy(all)