Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface

Haruyuki Yasuda, Fumihiro Matsukura, Yuzo Ohno, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We have studied the influence of As flux on InAs nanostructures on GaAs (211)B surfaces grown by molecular beam epitaxy (MBE) at various growth temperatures (TS). It is shown that isotropic quantum dots (QDs) are formed at low TS under high As pressure condition. However, non-isotropic nanostructures, quantum dashes (QDHs), are formed under low As flux conditions. It is also shown that the sizes of nanostructure become larger with increasing TS. The shapes of nanostructure depend on As flux as well as TS.

Original languageEnglish
Pages (from-to)413-417
Number of pages5
JournalApplied Surface Science
Issue number1
Publication statusPublished - 2000 Oct 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface'. Together they form a unique fingerprint.

Cite this