Arsenic atomic layer doping in Si using AsH3

Yuji Yamamoto, Rainer Kurps, Juichi Murota, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As dose as function of AsH3 exposure temperature is shown in Fig. 1. Temperature change after Si buffer deposition and AsH3 exposure are done in H2 or N2. For both cases the As incorporation is suppressed below 400°C. The incorporation behaviour is different from PH3 [3]. A possible explanation could be that limited hydrogen desorption from AsH3 molecule gas at lower temperature causes prevention of As adsorption. In the case of the sample of temperature change in H2, there is no or a very weak temperature dependence of the As dose at temperatures between 450°C to 700°C. By changing temperature in N2, slight increase of As dose is observed with increasing AsH3 exposure temperature from 450°C to 700°C.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages33-34
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: 2014 Jun 22014 Jun 4

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period14/6/214/6/4

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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