Array configuration and silicon-lens integration of asymmetric dual-grating-gate plasmonic THz detectors

F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, T. Ishibashi, M. Shimizu, Y. Takida, H. Ito, H. Minamide, A. Satou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We examine array configuration and silicon-lens integration of asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors in order to enhance their external coupling efficiencies. We demonstrate 4-fold enhancement of the efficiency by an array of four series-connected detectors and 6-fold enhancement by the hyper-hemispherical silicon-lens integration. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.

Original languageEnglish
Title of host publication41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
PublisherIEEE Computer Society
ISBN (Electronic)9781467384858
DOIs
Publication statusPublished - 2016 Nov 28
Event41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 - Copenhagen, Denmark
Duration: 2016 Sep 252016 Sep 30

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2016-November
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Other

Other41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
CountryDenmark
CityCopenhagen
Period16/9/2516/9/30

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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