TY - JOUR
T1 - Areal density control of ZnO nanowires in physical vapor transport using Ge nanocrystals
AU - Ishibe, Takafumi
AU - Taniguchi, Tatsuhiko
AU - Terada, Tsukasa
AU - Tomeda, Atsuki
AU - Watanabe, Kentaro
AU - Nakamura, Yoshiaki
N1 - Funding Information:
This work was supported in part by the JST CREST program. A part of this work was also supported by a Grant-in-Aid for Scientific Research A (Grant No. 16H02078), a Grant-in-Aid for Exploratory Research (Grant No. 15K13276), and for the JSPS Research fellow (17J00328).
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/8
Y1 - 2018/8
N2 - We revealed the most significant parameter determining an areal density of nanowires (NWs) in physical vapor transport. Seed layer characters such as the crystallinity and the surface roughness can affect the NW growth. We controlled the surface roughness and the crystallinity of seed layers both by annealing process and using Ge nanocrystals. With increase of the surface roughness of seed layers, the areal density of NWs increased, which was independent of the crystallinity of seed layers. Therefore, the large surface roughness was considered to be a critical parameter for high areal density of NWs. This study demonstrated that the substrate with well-controlled surface roughness brought control of an areal density of NWs. This well-controlled technique of NW areal density will open for the next generation NW devices.
AB - We revealed the most significant parameter determining an areal density of nanowires (NWs) in physical vapor transport. Seed layer characters such as the crystallinity and the surface roughness can affect the NW growth. We controlled the surface roughness and the crystallinity of seed layers both by annealing process and using Ge nanocrystals. With increase of the surface roughness of seed layers, the areal density of NWs increased, which was independent of the crystallinity of seed layers. Therefore, the large surface roughness was considered to be a critical parameter for high areal density of NWs. This study demonstrated that the substrate with well-controlled surface roughness brought control of an areal density of NWs. This well-controlled technique of NW areal density will open for the next generation NW devices.
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U2 - 10.7567/JJAP.57.08NB07
DO - 10.7567/JJAP.57.08NB07
M3 - Article
AN - SCOPUS:85051049247
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 08NB07
ER -