Area-selective regrowth followed by AsH                         3                          surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions

Takeo Ohno; Yutaka Oyama; Kenji Tezuka; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/S0169-4332(03)00506-3

Area-selective regrowth followed by AsH ₃ surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions

Takeo Ohno, Yutaka Oyama, Kenji Tezuka, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Low-temperature (290 °C) area-selective regrowth (ASR) by the intermittent injection of triethylgallium (TEGa) and arsine (AsH ₃ ) in an ultra-high vacuum (UHV) was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions with the junction area in the order of 10 ^-8 cm ² . Fabricated tunnel junctions have shown the record peak current density up to 35,000 A/cm ² at 100 μm long strip structure. It is shown that the tunnel junction characteristics are seriously dependent on the sidewall orientation and the regrown interface quality, which was determined by the surface treatment conditions under AsH ₃ just prior to regrowth. The junction characteristics and AsH ₃ surface treatment effects are discussed in view of the orientation dependence of Be doping and control of surface stoichiometry.

Original language	English
Pages (from-to)	549-553
Number of pages	5
Journal	Applied Surface Science
Volume	216
Issue number	1-4 SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00506-3
Publication status	Published - 2003 Jun 30

Keywords

GaAs
Regrowth
Selective epitaxy
Semiconductor homo- and hetero-interfaces
Sidewall
Tunnel junction

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(03)00506-3

Cite this

Ohno, T., Oyama, Y., Tezuka, K., Suto, K., & Nishizawa, J. I. (2003). Area-selective regrowth followed by AsH ₃ surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions Applied Surface Science, 216(1-4 SPEC.), 549-553. https://doi.org/10.1016/S0169-4332(03)00506-3

Area-selective regrowth followed by AsH ₃ surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions . / Ohno, Takeo; Oyama, Yutaka; Tezuka, Kenji et al.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 549-553.

Research output: Contribution to journal › Article › peer-review

Ohno, T, Oyama, Y, Tezuka, K, Suto, K & Nishizawa, JI 2003, ' Area-selective regrowth followed by AsH ₃ surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions ', Applied Surface Science, vol. 216, no. 1-4 SPEC., pp. 549-553. https://doi.org/10.1016/S0169-4332(03)00506-3

Ohno T, Oyama Y, Tezuka K, Suto K, Nishizawa JI. Area-selective regrowth followed by AsH ₃ surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions Applied Surface Science. 2003 Jun 30;216(1-4 SPEC.):549-553. https://doi.org/10.1016/S0169-4332(03)00506-3

@article{9f577f71d313456cb0f7ac89fedef787,

title = " Area-selective regrowth followed by AsH 3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions ",

abstract = " Low-temperature (290 °C) area-selective regrowth (ASR) by the intermittent injection of triethylgallium (TEGa) and arsine (AsH 3 ) in an ultra-high vacuum (UHV) was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions with the junction area in the order of 10 -8 cm 2 . Fabricated tunnel junctions have shown the record peak current density up to 35,000 A/cm 2 at 100 μm long strip structure. It is shown that the tunnel junction characteristics are seriously dependent on the sidewall orientation and the regrown interface quality, which was determined by the surface treatment conditions under AsH 3 just prior to regrowth. The junction characteristics and AsH 3 surface treatment effects are discussed in view of the orientation dependence of Be doping and control of surface stoichiometry.",

keywords = "GaAs, Regrowth, Selective epitaxy, Semiconductor homo- and hetero-interfaces, Sidewall, Tunnel junction",

author = "Takeo Ohno and Yutaka Oyama and Kenji Tezuka and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2003",

month = jun,

day = "30",

doi = "10.1016/S0169-4332(03)00506-3",

language = "English",

volume = "216",

pages = "549--553",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4 SPEC.",

}

TY - JOUR

T1 - Area-selective regrowth followed by AsH 3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions

AU - Ohno, Takeo

AU - Oyama, Yutaka

AU - Tezuka, Kenji

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2003/6/30

Y1 - 2003/6/30

N2 - Low-temperature (290 °C) area-selective regrowth (ASR) by the intermittent injection of triethylgallium (TEGa) and arsine (AsH 3 ) in an ultra-high vacuum (UHV) was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions with the junction area in the order of 10 -8 cm 2 . Fabricated tunnel junctions have shown the record peak current density up to 35,000 A/cm 2 at 100 μm long strip structure. It is shown that the tunnel junction characteristics are seriously dependent on the sidewall orientation and the regrown interface quality, which was determined by the surface treatment conditions under AsH 3 just prior to regrowth. The junction characteristics and AsH 3 surface treatment effects are discussed in view of the orientation dependence of Be doping and control of surface stoichiometry.

AB - Low-temperature (290 °C) area-selective regrowth (ASR) by the intermittent injection of triethylgallium (TEGa) and arsine (AsH 3 ) in an ultra-high vacuum (UHV) was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions with the junction area in the order of 10 -8 cm 2 . Fabricated tunnel junctions have shown the record peak current density up to 35,000 A/cm 2 at 100 μm long strip structure. It is shown that the tunnel junction characteristics are seriously dependent on the sidewall orientation and the regrown interface quality, which was determined by the surface treatment conditions under AsH 3 just prior to regrowth. The junction characteristics and AsH 3 surface treatment effects are discussed in view of the orientation dependence of Be doping and control of surface stoichiometry.

KW - GaAs

KW - Regrowth

KW - Selective epitaxy

KW - Semiconductor homo- and hetero-interfaces

KW - Sidewall

KW - Tunnel junction

UR - http://www.scopus.com/inward/record.url?scp=0038684460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038684460&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00506-3

DO - 10.1016/S0169-4332(03)00506-3

M3 - Article

AN - SCOPUS:0038684460

VL - 216

SP - 549

EP - 553

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4 SPEC.

ER -