Area-selective regrowth followed by AsH 3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions

Takeo Ohno, Yutaka Oyama, Kenji Tezuka, Ken Suto, Jun Ichi Nishizawa

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3 Citations (Scopus)


Low-temperature (290 °C) area-selective regrowth (ASR) by the intermittent injection of triethylgallium (TEGa) and arsine (AsH 3 ) in an ultra-high vacuum (UHV) was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions with the junction area in the order of 10 -8 cm 2 . Fabricated tunnel junctions have shown the record peak current density up to 35,000 A/cm 2 at 100 μm long strip structure. It is shown that the tunnel junction characteristics are seriously dependent on the sidewall orientation and the regrown interface quality, which was determined by the surface treatment conditions under AsH 3 just prior to regrowth. The junction characteristics and AsH 3 surface treatment effects are discussed in view of the orientation dependence of Be doping and control of surface stoichiometry.

Original languageEnglish
Pages (from-to)549-553
Number of pages5
JournalApplied Surface Science
Issue number1-4 SPEC.
Publication statusPublished - 2003 Jun 30


  • GaAs
  • Regrowth
  • Selective epitaxy
  • Semiconductor homo- and hetero-interfaces
  • Sidewall
  • Tunnel junction

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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