Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy

Toshio Kochiya, Yutaka Oyama, Maki Sugai, Jun ichi Nishizawa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Area selective epitaxy (ASE) of InP was performed by liquid phase epitaxy on Si (100) substrates without the use of buffer layers. At the start of epitaxy, the growth temperature was rapidly lowered to obtain high supersaturation. Epitaxial growth was then carried out at constant temperature. While small InP nuclei were observed in the broader open areas, ASE layers and layers showing slight epitaxial lateral overgrowth were formed in the narrow openings. Etch pit density of the InP ASE layers on Si is dependent on the length of open seed region and X-ray diffraction results indicate that the lattice strain in the InP nuclei on the Si substrate was fully relaxed.

Original languageEnglish
Pages (from-to)4838-4842
Number of pages5
JournalThin Solid Films
Volume515
Issue number11
DOIs
Publication statusPublished - 2007 Apr 9

Keywords

  • Epitaxy
  • Heterostructures
  • Indium phosphide
  • Liquid phase epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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