Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes

Yutaka Oyama; Toshio Kochiya; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/S0022-0248(02)01644-5

Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun Ichi Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The area-selective epitaxy (ASE) and epitaxial lateral overgrowth (ELO) were performed on {0 0 1}-, {1 1 1}A,B- and {1 1 0}-oriented InP by liquid phase epitaxy at constant growth temperature (450-650 °C). The as-grown surface and cross section were investigated by Nomarski interference optical microscope, SEM and confocal laser scanning microscope. From the cross sectional structure, area-selective epitaxy and ELO layers have shown {1 0 0} and {1 1 1}A,B facets on these surface. When compared with three integral axes, the vertical growth rate on {1 1 0} plane is the fastest among the three integral axes. According to the observations of cross sectional shape, the orientation dependence of vertical growth rate was determined to be {1 1 0} > {1 1 1} A,B > {1 0 0} under the present experimental conditions.

Original language	English
Pages (from-to)	181-192
Number of pages	12
Journal	Journal of Crystal Growth
Volume	245
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(02)01644-5
Publication status	Published - 2002 Nov 1

Keywords

A1. Crystal morphology
A1. Morphological stability
A1. Surface processes
A3. Liquid phase epitaxy
B1. Phosphides
B2. Semiconducting indium compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(02)01644-5

Fingerprint Dive into the research topics of 'Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes'. Together they form a unique fingerprint.

Cite this

@article{32b054a0deba4c4182805ddffa92666e,

title = "Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes",

abstract = "The area-selective epitaxy (ASE) and epitaxial lateral overgrowth (ELO) were performed on {0 0 1}-, {1 1 1}A,B- and {1 1 0}-oriented InP by liquid phase epitaxy at constant growth temperature (450-650 °C). The as-grown surface and cross section were investigated by Nomarski interference optical microscope, SEM and confocal laser scanning microscope. From the cross sectional structure, area-selective epitaxy and ELO layers have shown {1 0 0} and {1 1 1}A,B facets on these surface. When compared with three integral axes, the vertical growth rate on {1 1 0} plane is the fastest among the three integral axes. According to the observations of cross sectional shape, the orientation dependence of vertical growth rate was determined to be {1 1 0} > {1 1 1} A,B > {1 0 0} under the present experimental conditions.",

keywords = "A1. Crystal morphology, A1. Morphological stability, A1. Surface processes, A3. Liquid phase epitaxy, B1. Phosphides, B2. Semiconducting indium compounds",

author = "Yutaka Oyama and Toshio Kochiya and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2002",

month = nov,

day = "1",

doi = "10.1016/S0022-0248(02)01644-5",

language = "English",

volume = "245",

pages = "181--192",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes

AU - Oyama, Yutaka

AU - Kochiya, Toshio

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2002/11/1

Y1 - 2002/11/1

N2 - The area-selective epitaxy (ASE) and epitaxial lateral overgrowth (ELO) were performed on {0 0 1}-, {1 1 1}A,B- and {1 1 0}-oriented InP by liquid phase epitaxy at constant growth temperature (450-650 °C). The as-grown surface and cross section were investigated by Nomarski interference optical microscope, SEM and confocal laser scanning microscope. From the cross sectional structure, area-selective epitaxy and ELO layers have shown {1 0 0} and {1 1 1}A,B facets on these surface. When compared with three integral axes, the vertical growth rate on {1 1 0} plane is the fastest among the three integral axes. According to the observations of cross sectional shape, the orientation dependence of vertical growth rate was determined to be {1 1 0} > {1 1 1} A,B > {1 0 0} under the present experimental conditions.

AB - The area-selective epitaxy (ASE) and epitaxial lateral overgrowth (ELO) were performed on {0 0 1}-, {1 1 1}A,B- and {1 1 0}-oriented InP by liquid phase epitaxy at constant growth temperature (450-650 °C). The as-grown surface and cross section were investigated by Nomarski interference optical microscope, SEM and confocal laser scanning microscope. From the cross sectional structure, area-selective epitaxy and ELO layers have shown {1 0 0} and {1 1 1}A,B facets on these surface. When compared with three integral axes, the vertical growth rate on {1 1 0} plane is the fastest among the three integral axes. According to the observations of cross sectional shape, the orientation dependence of vertical growth rate was determined to be {1 1 0} > {1 1 1} A,B > {1 0 0} under the present experimental conditions.

KW - A1. Crystal morphology

KW - A1. Morphological stability

KW - A1. Surface processes

KW - A3. Liquid phase epitaxy

KW - B1. Phosphides

KW - B2. Semiconducting indium compounds

UR - http://www.scopus.com/inward/record.url?scp=0036847371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036847371&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)01644-5

DO - 10.1016/S0022-0248(02)01644-5

M3 - Article

AN - SCOPUS:0036847371

VL - 245

SP - 181

EP - 192

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -