Abstract
The area-selective epitaxy (ASE) and epitaxial lateral overgrowth (ELO) were performed on {0 0 1}-, {1 1 1}A,B- and {1 1 0}-oriented InP by liquid phase epitaxy at constant growth temperature (450-650 °C). The as-grown surface and cross section were investigated by Nomarski interference optical microscope, SEM and confocal laser scanning microscope. From the cross sectional structure, area-selective epitaxy and ELO layers have shown {1 0 0} and {1 1 1}A,B facets on these surface. When compared with three integral axes, the vertical growth rate on {1 1 0} plane is the fastest among the three integral axes. According to the observations of cross sectional shape, the orientation dependence of vertical growth rate was determined to be {1 1 0} > {1 1 1} A,B > {1 0 0} under the present experimental conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 181-192 |
| Number of pages | 12 |
| Journal | Journal of Crystal Growth |
| Volume | 245 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 2002 Nov 1 |
Keywords
- A1. Crystal morphology
- A1. Morphological stability
- A1. Surface processes
- A3. Liquid phase epitaxy
- B1. Phosphides
- B2. Semiconducting indium compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry