Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The area-selective epitaxy (ASE) and epitaxial lateral overgrowth (ELO) were performed on {0 0 1}-, {1 1 1}A,B- and {1 1 0}-oriented InP by liquid phase epitaxy at constant growth temperature (450-650 °C). The as-grown surface and cross section were investigated by Nomarski interference optical microscope, SEM and confocal laser scanning microscope. From the cross sectional structure, area-selective epitaxy and ELO layers have shown {1 0 0} and {1 1 1}A,B facets on these surface. When compared with three integral axes, the vertical growth rate on {1 1 0} plane is the fastest among the three integral axes. According to the observations of cross sectional shape, the orientation dependence of vertical growth rate was determined to be {1 1 0} > {1 1 1} A,B > {1 0 0} under the present experimental conditions.

Original languageEnglish
Pages (from-to)181-192
Number of pages12
JournalJournal of Crystal Growth
Volume245
Issue number3-4
DOIs
Publication statusPublished - 2002 Nov 1

Keywords

  • A1. Crystal morphology
  • A1. Morphological stability
  • A1. Surface processes
  • A3. Liquid phase epitaxy
  • B1. Phosphides
  • B2. Semiconducting indium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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