Applied voltage and temperature dependence of tunneling magnetoresistance

N. Tezuka, M. Oogane, T. Miyazaki

Research output: Contribution to journalConference articlepeer-review

17 Citations (Scopus)

Abstract

The dependence of tunnel magnetoresistance (TMR) ratio on temperature and applied voltage has been studied for Fe/Al-oxide/Fe and 80NiFe/Al-oxide/Co junctions. Their dependence for an Fe/Al-oxide/Fe junction is greater than that for a 80NiFe/Al-oxide/Co junction. The rapid decrease of TMR ratio with increasing temperature for the Fe/Al-oxide/Fe junction below 100 K or 10 mV and small decrease below about 40 K for the 80NiFe/Al-oxide/Co junction can be explained by the spin flip scattering due to magnetic impurities.

Original languageEnglish
Pages (from-to)149-151
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume198
DOIs
Publication statusPublished - 1999 Jun 1
EventProceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can
Duration: 1998 Jun 141998 Jun 19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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