Application to radiation dosimeter by using γ-ray induced current in InGaP solar cells

Yasuki Okuno, Masafumi Yamaguchi, Mitsuru Imaizumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The InGaP solar cell having superior high radiation resistance is expected to be a powerful candidate for a dosimeter under high radiation dose rate environment. Because the minority carrier diffusion length (L) is a factor determining the solar cell performance and L changes due to radiation damage, it is important to predict the detector performance based on the relationship between L and the absorbed dose. In this study, the effect of L on a radiation-induced current as a dose signal in InGaP solar cell is clarified by irradiation tests and empirical calculations. In order to estimate the L for InGaP solar cell, measuring the short-circuit current density (JSC) as afunction of γ-ray dose rate is conducted. Based on the experimental results and the empiricalformula of the relationship between L and JSC, the operational lifetime of the InGaP solar cell detector under various dose rate is estimated and is determined by the cumulative dose. The present result suggests the InGaP solar cell has high potential as a radiation resistant dosimeter for contributing to the decommissioning of the Fukushima Daiichi nuclear power plant.

Original languageEnglish
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3541-3544
Number of pages4
ISBN (Electronic)9781728104942
DOIs
Publication statusPublished - 2019 Jun
Externally publishedYes
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 2019 Jun 162019 Jun 21

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period19/6/1619/6/21

Keywords

  • InGaP solar cell
  • minority carrier diffusion length
  • radiation-induced current.

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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