Application of XPS time-dependent measurement to the analysis of charge trapping phenomena in HfAlO x films

K. Hirose, M. Yamawaki, K. Torii, T. Kawahara, S. Kawashiri, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    We found that the Si 2p photoelectron peak binding energy of a Si substrate covered with a 3 nm thick HfAlO X film increased to a saturation value during X-ray irradiation. This shift towards a higher binding energy indicates an increase in the amount of positive charges in the film, and the density of hole traps is estimated to be significantly higher than that in a SiO 2 film. Before X-ray irradiation, the interface Fermi level coincided with the valence-band maximum of the Si substrate, which indicates that the Si surface band bends upward. This means that there were negative charges already in the film before X-ray irradiation. Investigating the effects of the interlayer beneath the HfAlO x film on these trapped charges reveals that the observed hole trapping and initial electron trapping are intrinsic to the HfAlO x film.

    Original languageEnglish
    Pages (from-to)411-415
    Number of pages5
    JournalApplied Surface Science
    Volume237
    Issue number1-4
    DOIs
    Publication statusPublished - 2004 Oct 15

    Keywords

    • Crystalline-amorphous interfaces
    • Hafnium oxides
    • Insulating films
    • Semiconductorinsulator interfaces
    • Silicon
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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