Application of spectroscopic photoemission and low energy electron microscope to high-k gate dielectrics: Relationship between surface morphology and electronic states during Hf-silicide formation

R. Yasuhara, T. Taniuchi, H. Kumigashira, M. Oshima, F. Guo, T. Kinoshita, K. Ono, K. Ikeda, G. L. Liu, Z. Liu, K. Usuda

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have applied the spectroscopic photoemission and low energy electron microscope to study high-k gate dielectrics and have performed the following in situ operations during ultrahigh vacuum annealing: real-time observation of surface morphology and microregion photoelectron spectroscopy measurements. Changes in surface morphology and electronic states were consistent with the models previously reported in the case of HfO 2 /Si. No clear differences between void regions and nonvoid regions have been observed in microregion photoelectron spectra for poly-Si/HfO 2 /Si, regardless of phase separation in real space. These results have suggested that the initial void formation occurs in about 100-nm wide regions for both HfO 2 /Si and poly-Si/HfO 2 /Si.

Original languageEnglish
Pages (from-to)4757-4761
Number of pages5
JournalApplied Surface Science
Volume254
Issue number15
DOIs
Publication statusPublished - 2008 May 30
Externally publishedYes

Keywords

  • Electronic states
  • High-k gate dielectrics
  • Microregion photoelectron spectroscopy
  • PEEM
  • Vacuum annealing

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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