Abstract
We have applied the spectroscopic photoemission and low energy electron microscope to study high-k gate dielectrics and have performed the following in situ operations during ultrahigh vacuum annealing: real-time observation of surface morphology and microregion photoelectron spectroscopy measurements. Changes in surface morphology and electronic states were consistent with the models previously reported in the case of HfO2/Si. No clear differences between void regions and nonvoid regions have been observed in microregion photoelectron spectra for poly-Si/HfO2/Si, regardless of phase separation in real space. These results have suggested that the initial void formation occurs in about 100-nm wide regions for both HfO2/Si and poly-Si/HfO2/Si.
Original language | English |
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Pages (from-to) | 4757-4761 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 254 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2008 May 30 |
Externally published | Yes |
Keywords
- Electronic states
- High-k gate dielectrics
- Microregion photoelectron spectroscopy
- PEEM
- Vacuum annealing
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films