Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

Noritaka Usami, Ryota Nihei, Yukinaga Azuma, Ichiro Yonenaga, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We report on combination of crystal growth of bulk SiGe and thin film crystals on SiGe bulk substrates to prepare heterostructures with controlled stain in constituent materials. Muticomponent zone melting method to permit crystal growth with uniform composition and Czochralski growth were employed as growth techniques for SiGe bulk crystals. On homemade SiGe bulk substrates, we realized strained Si thin film as well as luminescent strained quantum wells with improved structural perfection compared with those on relaxed SiGe on commercially available Si.

Original languageEnglish
Pages (from-to)14-16
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 2008 Nov 3

Keywords

  • Crystal growth
  • SiGe bulk crystal
  • Strained Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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