Application of multi-step formation during molecular beam epitaxy for fabricating novel nanomechanical structures

Hiroshi Yamaguchi, Yoshiro Hirayama

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We propose a novel application of "self-assembling" one-dimensional semiconductor nanostructures for nanoscale electromechanical systems. A sacrificial layer of a GaAs/AlGaAs supperlattice under InAs wires preferentially grown on bunched steps on misoriented GaAs (1 1 0) surfaces was selectively etched to form semiconductor cantilevers that have typical lengths, widths, and thicknesses of 50-300, 20-100 and 10-20 nm, respectively. The force constant, as measured by the force-modulation imaging technique using contact-mode atomic force microscopy, ranges from 0.5 to 10 N/m, showing good agreement with that estimated from the elastic constant of InAs.

Original languageEnglish
Pages (from-to)281-284
Number of pages4
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - 2003 Apr
Externally publishedYes
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 2002 Sep 152002 Sep 20

Keywords

  • A3. Molecular-beam epitaxy
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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