Low-temperature (290°C) area-selective regrowth by the intermittent injection of precursors in an ultrahigh vacuum was applied for the fabrication of ultrashallow sidewall GaAs tunnel junctions with the junction area in the order of 10-8cm2. The tunnel junctions on the normal mesa orientation have shown the record peak current density up to 31000A/cm 2 and negative differential conductance of -1.4×10-5 S at 100 μm long strip structure. The peak current density of tunnel junctions has shown strong sidewall orientation dependences with the order of 111A>110>111B.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)