Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions

Yutaka Oyama, Takeo Ohno, Kenji Tezuka, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Low-temperature (290°C) area-selective regrowth by the intermittent injection of precursors in an ultrahigh vacuum was applied for the fabrication of ultrashallow sidewall GaAs tunnel junctions with the junction area in the order of 10-8cm2. The tunnel junctions on the normal mesa orientation have shown the record peak current density up to 31000A/cm 2 and negative differential conductance of -1.4×10-5 S at 100 μm long strip structure. The peak current density of tunnel junctions has shown strong sidewall orientation dependences with the order of 111A>110>111B.

Original languageEnglish
Pages (from-to)2563-2565
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number14
DOIs
Publication statusPublished - 2002 Sep 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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