Application of lithium niobate etch stop Technology to saw pressure sensors

Andrew B. Randles; Jan H. Kuypers; Masayoshi Esashi; Shuji Tanaka

doi:10.1109/ULTSYM.2008.0271

Application of lithium niobate etch stop Technology to saw pressure sensors

Andrew B. Randles, Jan H. Kuypers, Masayoshi Esashi, Shuji Tanaka

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

This paper presents a process technology to form thin diaphragms with sealed cavities in a lithium niobate (LiNbOa) wafer, which will be used for small and sensitive SAW-based pressure sensors. The process technology uses thermal inversion, wet stretching with an electroplated Au mask, etch stop at the thermal inversion layer and Au-Au bonding. By the combination of an etch stop and pinhole-free masking, LiNbOa thin diaphragms with thicknesses of several tens of jim to 10 fim were fabricated in 128° Y cut LiNbC 3 wafers. The Au-Au bonding of the LiNbOa wafer gave hermetic sealing. In addition the etch profiles of the LiNbC 3 wafer predicted by Wulff-Jaccodine plots and observed in experiments were compared, and good agreement was confirmed.

Original language	English
Article number	4803344
Pages (from-to)	1124-1127
Number of pages	4
Journal	Proceedings - IEEE Ultrasonics Symposium
DOIs	https://doi.org/10.1109/ULTSYM.2008.0271
Publication status	Published - 2008 Dec 1
Externally published	Yes
Event	2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China Duration: 2008 Nov 2 → 2008 Nov 5

ASJC Scopus subject areas

Acoustics and Ultrasonics

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10.1109/ULTSYM.2008.0271

Cite this

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title = "Application of lithium niobate etch stop Technology to saw pressure sensors",

abstract = "This paper presents a process technology to form thin diaphragms with sealed cavities in a lithium niobate (LiNbOa) wafer, which will be used for small and sensitive SAW-based pressure sensors. The process technology uses thermal inversion, wet stretching with an electroplated Au mask, etch stop at the thermal inversion layer and Au-Au bonding. By the combination of an etch stop and pinhole-free masking, LiNbOa thin diaphragms with thicknesses of several tens of jim to 10 fim were fabricated in 128° Y cut LiNbC 3 wafers. The Au-Au bonding of the LiNbOa wafer gave hermetic sealing. In addition the etch profiles of the LiNbC 3 wafer predicted by Wulff-Jaccodine plots and observed in experiments were compared, and good agreement was confirmed.",

author = "Randles, {Andrew B.} and Kuypers, {Jan H.} and Masayoshi Esashi and Shuji Tanaka",

year = "2008",

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doi = "10.1109/ULTSYM.2008.0271",

language = "English",

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journal = "Proceedings - IEEE Ultrasonics Symposium",

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note = "2008 IEEE International Ultrasonics Symposium, IUS 2008 ; Conference date: 02-11-2008 Through 05-11-2008",

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T1 - Application of lithium niobate etch stop Technology to saw pressure sensors

AU - Randles, Andrew B.

AU - Kuypers, Jan H.

AU - Esashi, Masayoshi

AU - Tanaka, Shuji

PY - 2008/12/1

Y1 - 2008/12/1

N2 - This paper presents a process technology to form thin diaphragms with sealed cavities in a lithium niobate (LiNbOa) wafer, which will be used for small and sensitive SAW-based pressure sensors. The process technology uses thermal inversion, wet stretching with an electroplated Au mask, etch stop at the thermal inversion layer and Au-Au bonding. By the combination of an etch stop and pinhole-free masking, LiNbOa thin diaphragms with thicknesses of several tens of jim to 10 fim were fabricated in 128° Y cut LiNbC 3 wafers. The Au-Au bonding of the LiNbOa wafer gave hermetic sealing. In addition the etch profiles of the LiNbC 3 wafer predicted by Wulff-Jaccodine plots and observed in experiments were compared, and good agreement was confirmed.

AB - This paper presents a process technology to form thin diaphragms with sealed cavities in a lithium niobate (LiNbOa) wafer, which will be used for small and sensitive SAW-based pressure sensors. The process technology uses thermal inversion, wet stretching with an electroplated Au mask, etch stop at the thermal inversion layer and Au-Au bonding. By the combination of an etch stop and pinhole-free masking, LiNbOa thin diaphragms with thicknesses of several tens of jim to 10 fim were fabricated in 128° Y cut LiNbC 3 wafers. The Au-Au bonding of the LiNbOa wafer gave hermetic sealing. In addition the etch profiles of the LiNbC 3 wafer predicted by Wulff-Jaccodine plots and observed in experiments were compared, and good agreement was confirmed.

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JO - Proceedings - IEEE Ultrasonics Symposium

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T2 - 2008 IEEE International Ultrasonics Symposium, IUS 2008

Y2 - 2 November 2008 through 5 November 2008

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Application of lithium niobate etch stop Technology to saw pressure sensors

Abstract

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