Application of lithium niobate etch stop Technology to saw pressure sensors

Andrew B. Randles; Jan H. Kuypers; Masayoshi Esashi; Shuji Tanaka

doi:10.1109/ULTSYM.2008.0271

Application of lithium niobate etch stop Technology to saw pressure sensors

Andrew B. Randles, Jan H. Kuypers, Masayoshi Esashi, Shuji Tanaka

Research output: Contribution to journal › Conference article

9 Citations (Scopus)

Abstract

This paper presents a process technology to form thin diaphragms with sealed cavities in a lithium niobate (LiNbOa) wafer, which will be used for small and sensitive SAW-based pressure sensors. The process technology uses thermal inversion, wet stretching with an electroplated Au mask, etch stop at the thermal inversion layer and Au-Au bonding. By the combination of an etch stop and pinhole-free masking, LiNbOa thin diaphragms with thicknesses of several tens of jim to 10 fim were fabricated in 128° Y cut LiNbC 3 wafers. The Au-Au bonding of the LiNbOa wafer gave hermetic sealing. In addition the etch profiles of the LiNbC 3 wafer predicted by Wulff-Jaccodine plots and observed in experiments were compared, and good agreement was confirmed.

Original language	English
Article number	4803344
Pages (from-to)	1124-1127
Number of pages	4
Journal	Proceedings - IEEE Ultrasonics Symposium
DOIs	https://doi.org/10.1109/ULTSYM.2008.0271
Publication status	Published - 2008 Dec 1
Event	2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China Duration: 2008 Nov 2 → 2008 Nov 5

ASJC Scopus subject areas

Acoustics and Ultrasonics

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10.1109/ULTSYM.2008.0271

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Randles, A. B., Kuypers, J. H., Esashi, M., & Tanaka, S. (2008). Application of lithium niobate etch stop Technology to saw pressure sensors. Proceedings - IEEE Ultrasonics Symposium, 1124-1127. [4803344]. https://doi.org/10.1109/ULTSYM.2008.0271

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abstract = "This paper presents a process technology to form thin diaphragms with sealed cavities in a lithium niobate (LiNbOa) wafer, which will be used for small and sensitive SAW-based pressure sensors. The process technology uses thermal inversion, wet stretching with an electroplated Au mask, etch stop at the thermal inversion layer and Au-Au bonding. By the combination of an etch stop and pinhole-free masking, LiNbOa thin diaphragms with thicknesses of several tens of jim to 10 fim were fabricated in 128° Y cut LiNbC 3 wafers. The Au-Au bonding of the LiNbOa wafer gave hermetic sealing. In addition the etch profiles of the LiNbC 3 wafer predicted by Wulff-Jaccodine plots and observed in experiments were compared, and good agreement was confirmed.",

author = "Randles, {Andrew B.} and Kuypers, {Jan H.} and Masayoshi Esashi and Shuji Tanaka",

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