Hydrogen and helium behavior in Ti, Zr and Nb membranes of several μm thickness was investigated by Elastic Recoil Detection Analysis (ERDA) using 6 MeV O and 12 MeV C beams in the transmission geometry. The concentration depth profiles of H and He during the 4He implantation were simultaneously measured in the membranes containing uniformly distributed H of about 0.1 at.%. During the 4He implantation into Ti, Zr and Nb membranes, an enrichment of the H concentration was observed at the depth corresponding to the range of the implanted 4He ions. In the Nb membrane, a reversible change of the H profile was observed on heating and cooling runs. The trapping energy of H in defects created by 10 keV 4He implantation in the Nb membrane was estimated to be 0.14 ± 0.03 eV from the change in H concentration on cooling after the 4He implantation at 500 K.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 1998 Mar|
ASJC Scopus subject areas
- Nuclear and High Energy Physics