Application of deep reactive ion etching for silicon angular rate sensor

J. Choi, K. Minami, M. Esashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new silicon resonant angular rate sensor by deep reactive ion etching was developed. The sensor consists of a glass-silicon-glass structure. To have a sensor of high Q factor, a one-side suspended tuning fork structure was adopted. The silicon resonator structure which has high aspect ratio was machined by reactive ion etching. The etching gas of the RIE was SR6 and etching rate was 0.8 μm/min. The resonator is driven electromagnetically and the torsional vibration caused by the Coriolis force is detected capacitively. The test device showed a sensitivity of 6 fFsec./deg. and had an output to the angular rate in a range from -360 deg./sec to 240 deg/sec.

Original languageEnglish
Pages (from-to)186-190
Number of pages5
JournalMicrosystem Technologies
Volume2
Issue number4
DOIs
Publication statusPublished - 1996 Oct

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Application of deep reactive ion etching for silicon angular rate sensor'. Together they form a unique fingerprint.

  • Cite this