Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells

Noritaka Usami, Ryota Nihei, Ichiro Yonenaga, Yoshitaro Nose, Kazuo Nakajima

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Czochralski-grown Si1-x Gex bulk crystal (x=0.085) was utilized as a substrate for strained Si-based quantum wells (QWs). The linewidth of the (400) x-ray rocking curve of the SiGe(100) substrate was comparable with that of the Si(100) substrate, and no peak splitting was observed in the line scan all over the substrate. Epitaxial growth of strained QWs designed as a couple of strained Si/strained Ge QWs have been attempted simultaneously on SiGe(100) and Si(100). Photoluminescence measurements revealed that the sample on SiGe(100) exhibits peaks from excitons confined in QWs without any dislocation-related luminescence in contrast to that on Si(100).

Original languageEnglish
Article number181914
JournalApplied Physics Letters
Volume90
Issue number18
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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