Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells

Czochralski-grown Si1-x Gex bulk crystal (x=0.085) was utilized as a substrate for strained Si-based quantum wells (QWs). The linewidth of the (400) x-ray rocking curve of the SiGe(100) substrate was comparable with that of the Si(100) substrate, and no peak splitting was observed in the line scan all over the substrate. Epitaxial growth of strained QWs designed as a couple of strained Si/strained Ge QWs have been attempted simultaneously on SiGe(100) and Si(100). Photoluminescence measurements revealed that the sample on SiGe(100) exhibits peaks from excitons confined in QWs without any dislocation-related luminescence in contrast to that on Si(100).