Application of aluminum-alloy ultrahigh vacuum system to semiconductor device fabrication processes

Maki Suemitsu, Nobuo Miyamoto

Research output: Contribution to conferencePaperpeer-review

Abstract

The aluminum-alloy ultra-high-vacuum (UHV) system has been shown to possess several excellent vacuum properties, such as an extremely low outgassing rate and an extremely short pumpdown time to reach the UHV region. It has, therefore, a considerable potential as a UHV system for next-generation semiconductor processes. For this application, however, proper surface treatments must be applied to the inner surface of the chamber, depending on the environment created by the process. A lathing method that utilizes alcohols as the lathing liquid has been developed for this purpose and found to be effective for processes that do not contain corrosive species. A silicon molecular beam epitaxy (MBE) chamber has been constructed with this method, and its vacuum properties were tested. For processes that contain corrosive species, ceramic coating was tested and found effective.

Original languageEnglish
Pages172-175
Number of pages4
Publication statusPublished - 1989 Dec 1
EventSixth IEEE/CHMT International Electronic Manufacturing Technology Symposium - Nara, Japan
Duration: 1989 Apr 261989 Apr 28

Other

OtherSixth IEEE/CHMT International Electronic Manufacturing Technology Symposium
CityNara, Japan
Period89/4/2689/4/28

ASJC Scopus subject areas

  • Engineering(all)

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